Hydrogenated Amorphous Silicon (Solid State Phenomena , Vol 44-46) by Hans Neber-Aeschbacher

Cover of: Hydrogenated Amorphous Silicon (Solid State Phenomena , Vol 44-46) | Hans Neber-Aeschbacher

Published by Trans Tech Pubn .

Written in English

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Subjects:

  • Condensed matter physics (liquids & solids),
  • Electricity, magnetism & electromagnetism,
  • Materials science,
  • Physical Properties Of Materials,
  • Semiconductor Physics,
  • Science/Mathematics

Book details

The Physical Object
FormatPaperback
Number of Pages1080
ID Numbers
Open LibraryOL12344492M
ISBN 103908450101
ISBN 109783908450108

Download Hydrogenated Amorphous Silicon (Solid State Phenomena , Vol 44-46)

This book describes the properties and device applications of hydrogenated amorphous silicon. It covers the growth, the atomic and electronic structure, the properties of dopants and defects, the optical and electronic properties which result from the disordered structure, and the applications of this technologically very important material.5/5(1).

This book describes the properties and device applications of hydrogenated amorphous silicon. It covers the growth, the atomic and electronic structure, the properties of dopants and defects, the optical and electronic properties which result from the disordered structure and finally the applications of this technologically very important by:   This book describes the properties and device applications of hydrogenated amorphous silicon.

It covers the growth, the atomic and electronic structure, the properties of dopants and defects, the optical and electronic properties which result from the disordered structure, and the applications of this technologically very important material.

The analysis of the efficiency degradation of the light-soaked hydrogenated amorphous silicon solar cell (Staebler-Wronski effect) is the key issue in this book. A valence band tail plus defect model is used for it,combining with a modified hydrogen collision model for the estimation of 4/5(1).

Hydrogenated amorphous silicon-sulfur alloy layers were prepared by the RF glow discharge decomposition of a mixture of SiH 4 and H 2 S gases diluted in helium.

Films were concurrently deposited on Corning glass and on highly resistive c-Si substrates. The substrate temperature during growth was held constant at °C. Divided roughly into two parts, the book describes the physical properties and device applications of hydrogenated amorphous silicon.

The first section is concerned with the atomic and electronic structure, and covers growth defects and doping and defect reactions. Michael R. Squillante, Kanai S. Shah, in Semiconductors and Semimetals, 6 Amorphous Silicon. Amorphous silicon appears to be an attractive material for making two dimensional, position sensitive x-ray and particle detectors.

Hydrogenated Amorphous Silicon book Amorphous silicon (a-Si) has been under intense investigation for over a decade for use in low cost photovoltaic solar cells and more recently for use in electronic.

This book describes the properties and device applications of hydrogenated amorphous silicon. It covers the growth, the atomic and electronic structure, the properties of dopants and defects, the optical and electronic properties which result from the disordered structure, and the applications of this technologically very important material.

Hydrogenated amorphous silicon (a-Si:H) has recently proved to be a suitable base material for the synthesis of silicon nanowires (SiNWs) by metal-assisted chemical etching (MACE).

The etching procedure on this material shows an extraordinary sensitivity to slight compositional changes and, although dopant influence on the process has been previously addressed, little is known on the role of.

Amorphous hydrogenated Si is used in inexpensive thin film solar cells. The mobility gap is about eV, which is larger than the bandgap crystalline of Si ( eV).

a-Si:H is a direct-gap material, and therefore thin films are good light absorbers. a-Si:H solar cells can be vapor-deposited in large-area sheets. p + Si-a-Si:H-n + Si cells have around 10% power conversion efficiency.

This book describes the properties and device applications of hydrogenated amorphous silicon. It covers the growth, the atomic and Hydrogenated Amorphous Silicon book structure, the properties of dopants and defects, the optical and electronic properties which result from the disordered structure and finally the applications of this technologically very important material.

Ultrathin layers of hydrogenated amorphous silicon (a‐Si:H), passivating the surface of crystalline silicon (c‐Si), are key enablers for high‐efficiency silicon heterojunction solar cells. In this work, the authors apply highly sensitive attenuated total reflectance Fourier‐transform infrared spectroscopy, combined with carrier.

Experimental and theoretical results concerning H bonding in hydrogenated amorphous (a-Si:H) and crystalline silicon (c-Si) indicate that H predominantly bonds to the silicon network in pairs.

Various possibilities for such two atom complexes are investigated. A promising candidate is a two hydrogen complex consisting of a bond centered and antibonding H proposed for c-Si. This chapter introduces the basic principles of Electron‐Spin Resonance (ESR) and its application to Hydrogenated Amorphous Silicon (a‐Si:H).

The main advantage of ESR is that almost any kind of sample geometry can be studied nondestructively, provided that the sample fits into the resonator of the ESR spectrometer. Amorphous silicon (a-Si) has as such no band gap like crystalline silicon (c-Si). In c-Si, band gap is the energy range in which the density of allowed states is zero.

Hydrogenated Amorphous Silicon (Cambridge Solid State Science Series) by Street, R. and a great selection of related books, art and collectibles available now at   The selective etching of hydrogenated amorphous silicon (a-Si:H) with respect to crystalline Si (c-Si) by hydrogen plasma is investigated.

We have revealed that a-Si:H is etched ten times faster than c-Si. With lower etching temperature, etching selectivity and. Email your librarian or administrator to recommend adding this book to your organisation's collection. Amorphous Semiconductors.

Sándor Kugler, Koichi Shimakawa; Online ISBN: Direct measurement of gap-state absorption in hydrogenated amorphous silicon by photothermal deflection spectroscopy.

Phys. Rev. B, 25, – Divided roughly into two parts, the book describes the physical properties and device applications of hydrogenated amorphous silicon. The first section is concerned with the atomic and electronic structure, and covers growth defects and doping and defect reactions.

The emphasis is on the optical Price: $ This book describes the properties and device applications of hydrogenated amorphous silicon. It covers the growth, the atomic and electronic structure, the properties of dopants and defects, the optical and electronic properties which result from the disordered structure and finally the applications of this technologically very important material.

Get this from a library. Hydrogenated amorphous silicon. [Hans Neber-Aeschbacher;] -- Ever since the work of W.E. Spear and P.G. LeComber had proved that an amorphous semiconductor could indeed also be substitutionally doped, research in the respective field has seen an nearly.

Amorphous silicon based alloys such as hydrogenated silicon nitride (a-Si x N y:H), silicon carbide (a-Si x C y:H) and silicon oxide (a-Si x O y:H) can be easily grown by r.f. plasma-enhanced chemical vapor deposition (PE-CVD) on large area with an excellent control of the compositional homogeneity and thickness at nanometer scale.

Abstract. Hydrogenated amorphous silicon TFTs are the work-horse of the active matrix flat panel display industry, and the architecture and fabrication processes of these devices are described in.

Part of the Topics in Applied Physics book series (TAP, volume 56) Log in to check access. Buy eBook. USD Instant download; Readable on all devices Time-resolved charge transport in hydrogenated amorphous silicon. Tiedje. Pages Vibrational Properties of Amorphous Alloys.

Lucovsky, W. Pollard. Pages Back. adshelp[at] The ADS is operated by the Smithsonian Astrophysical Observatory under NASA Cooperative Agreement NNX16AC86A. Hydrogenated amorphous silicon (a-Si:H) has now become the leading material in photovoltaic devices (e.g., solar cells) and is extensively used in xerographic copiers, thin film transistors (TFT), photodetectors, image sensors and optical mass memories.

Amorphous silicon (a-Si) films were first deposited by the glow. Amorphous silicon (a-Si) is a well-known and industrially proven non-crystalline material.

It is widely used in commercial applications; for example, thin-film transistors in liquid crystal displays, thin-film solar cells, and microbolometers for thermal cameras [].Recently, the mature silicon (Si) thin-film technology has advanced toward a new research field: Si photonics.

The Paperback of the The Physics of Hydrogenated Amorphous Silicon I: Structure, Preparation, and Devices by J.D. Joannopoulos at Barnes & Noble. FREE Due to COVID, orders may be delayed.

At the present time hydrogenated amorphous silicon (a-Si:H) is a mature material of the microelectronics and photovoltaic industries. Its success is due to the compatibility with the silicon CMOS technology, the possibility of doping (n or p type), the low substrate temperatures used (≤°C) when is deposited by the plasma-enhanced chemical vapor deposition (PECVD) technique, and the.

@article{osti_, title = {Optical properties of p–i–n structures based on amorphous hydrogenated silicon with silicon nanocrystals formed via nanosecond laser annealing}, author = {Krivyakin, G.

and Volodin, V. A., E-mail: [email protected] and Kochubei, S. and Kamaev, G. and Purkrt, A. and Remes, Z. and Fajgar, R. and Stuchliková, T. and Stuchlik, J.}, abstractNote.

Chlorine containing hydrogenated amorphous silicon films were deposited by adding HCl to SiH 4 containing plasmas. Bulk and surface bonding features, film thickness and optical band gap were examined by in situ infrared spectroscopies and spectroscopic ellipsometry.

Hydrogenated amorphous silicon (a-Si:H) films have been commonly prepared by glow discharge decomposition of silane (SiH{sub 4}) using capacitively coupled plasmas (CCP). In course of the film deposition with CCP, however, substrates must be heated at moderate temperatures around C to obtain high quality films.

Optoelectronic Properties of Amorphous Silicon the Role of Hydrogen: From Experiment to Modeling Franco Gaspari University of Ontario Institute of Technology, Canada 1.

Introduction Amorphous silicon, and its more useful alloy form, hydrogenated amorphous silicon (a-Si:H), has been the subject of investigation for more than three deca des.

We have developed a new method of capacitance profiling which is greatly superior to standard profiling techniques for materials like amorphous silicon that contain high densities of deep gap states. This technique, which makes use of the variation of the junction capacitance with the alternating voltage amplitude, is largely immune to the effects of surface states and is readily.

Details about Hydrogenated Amorphous Silicon by Street, R. Be the first to write a review. Hydrogenated Amorphous Silicon by Street, R. Describes the properties and semiconductor device applications of hydrogenated amorphous silicon.

A Materials Science book. Product Identifiers: Publisher: Cambridge University Press: ISBN Amorphous silicon solar cell technology has evolved considerably since the first amorphous silicon solar cells were made at RCA Laboratories in Scien tists working in a number of laboratories worldwide have developed improved alloys based on hydrogenated amorphous silicon and microcrystalline silicon.

Read Online Now hydrogenated amorphous silicon Ebook PDF at our Library. Get hydrogenated amorphous silicon PDF file for free from our online library PDF File: hydrogenated amorphous silicon.

3rd Edition PDF. So depending on what exactly you are searching, you will be able to choose ebooks to suit your own needs. The role of the neutral dangling bond defect upon photocarrier processes in undoped amorphous hydrogenated silicon (a-Si:H) is discussed.

The evidence that the dangling bond is a simple recombination center is reviewed, and it is shown that this model does not account for photocurrent response time measurements. Comments. Amorphous silicon (α-Si or a-Si). nm film. References. 1) D. Pierce and W. Spicer, Electronic structure of amorphous Si from photoemission and optical studies, Phys.

Rev. B 5, () 2) Handbook of Optical Constants of Solids, Edward D. Palik, ed. Academic Press, Boston, Amorphous Silicon Film Growth Simulations 19 Void Structures in Amorphous Silicon 27 Voids in Bulk Melt-Quenched Amorphous Silicon Networks 31 Voids in Amorphous Silicon Film Networks 41 CHAPTER 3.

STRUCTURAL MODELING OF HYDROGENATED AMORPHOUS SILICON 50 Interatomic Potentials 53 Structure of Hydrogenated Amorphous Silicon 56 CHAPTER 4. High Efficiency Amorphous Silicon Thin Film Solar Cells: Modeling, Fabrication and Characterization The conversion efficiency of a solar cell can substantially be increased by improved material properties and associated designs.

In this book, it h.Hydrogenated amorphous silicon (a-Si:H) is one of the most important electronic materials, having applications in solar cells,1,2 night-vision devices,3 thin-film transistors,4 position-detection sensors,5 liquid crystal display,6 and many other electro-optical devices.7–9 Since the “dangling bond”.

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